Metal oxide silicon transistor and semiconductor apparatus...

Details Metal oxide silicon transistor and semiconductor apparatus... Metal oxide silicon transistor and semiconductor apparatus...

2007-08-28

2007-08-28

Cao, Phat X. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

C257S270000, C257S392000, C257SE29021

Reexamination Certificate

active

10780699

ABSTRACT:
A semiconductor apparatus includes a MOS transistor having a semiconductor substrate providing as a channel region between a source and a drain. A gate electrode is formed on the semiconductor substrate via a gate oxide film. A threshold voltage of the source side region of the MOS transistor is higher than that of the drain side region in a longitudinal direction of the channel region so that a saturation drain current can be constant and a λ performance can be improved while suppressing channel width and length.

REFERENCES:
patent: 3877055 (1975-04-01), Fisher et al.
patent: 5401987 (1995-03-01), Hiser et al.
patent: 6121666 (2000-09-01), Burr
patent: 08-274330 (1996-10-01), None
patent: 10-178102 (1998-06-01), None

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