Metal oxide sensors and method of forming

Details Metal oxide sensors and method of forming Metal oxide sensors and method of forming

2007-04-24

2007-04-24

Nguyen, Cuong (Department: 2811)

Semiconductor device manufacturing: process

Including control responsive to sensed condition

Electrical characteristic sensed

C438S017000

Reexamination Certificate

active

11136585

ABSTRACT:
A metal oxide sensor is provided on a semiconductor substrate to provide on-chip sensing of gases. The sensor may include a metal layer that may have pores formed by lithography to be of a certain width. The top metal layer may be oxidized resulting in a narrowing of the pores. Another metal layer may be formed over the oxidized layer and electrical contacts may be formed on the metal layer. The contacts may be coupled to a monitoring system that receives electrical signals indicative of gases sensed by the metal oxide sensor.

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