Metal-oxide-semiconductor varactors

Details Metal-oxide-semiconductor varactors Metal-oxide-semiconductor varactors

2007-10-02

2007-10-02

Dang, Phuc T. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

C257S199000

Reexamination Certificate

active

11169070

ABSTRACT:
Integrated circuit varactors and methods for varactor fabrication are provided. Varactors are formed on integrated circuits that contain complementary metal-oxide-semiconductor (CMOS) transistors. The same semiconductor fabrication process steps are used to form both the varactors and CMOS transistors, thereby eliminating potentially cost-prohibitive changes to manufacturing process flows. Varactor performance is enhanced by including a deep n-well structure. The deep n-well reduces sheet resistance in the semiconductor portion of the varactor and improves the varactor's quality factor. The deep n-well is formed from the same deep n-well layer that is used to form the CMOS transistors on the integrated circuit. The varactor has two active electrodes. The electrodes are spaced farther apart than specified by semiconductor fabrication design rules. The number of contact vias used in one of the electrodes is less than the maximum specified by the design rules.

REFERENCES:
patent: 6376870 (2002-04-01), Carpenter et al.
patent: 6764891 (2004-07-01), Altmann
patent: 6825089 (2004-11-01), Shapira et al.

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