Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With non-planar semiconductor surface
Reexamination Certificate
2007-10-30
2007-10-30
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With non-planar semiconductor surface
C257S171000, C257S618000, C257S623000, C257S625000, C257SE29329, C257SE21428, C438S282000, C438S297000, C438S343000, C438S412000, C438S481000
Reexamination Certificate
active
11163124
ABSTRACT:
A metal-oxide-semiconductor (MOS) transistor device is provided. The MOS transistor device includes a substrate, a gate structure, a spacer, a source/drain region and a barrier layer. The gate structure is disposed on the substrate. The gate structure includes a gate and a gate dielectric layer disposed between the gate and the substrate. The spacer is disposed on the sidewall of the gate structure. The source/drain region is disposed in the substrate on two sides of the spacer. The barrier layer is disposed around the source/drain region. The source/drain region and the barrier layer are fabricated using an identical material. However, the doping concentration of the source/drain region is larger than the doping concentration of the barrier layer.
REFERENCES:
patent: 4914500 (1990-04-01), Liu et al.
patent: 5759901 (1998-06-01), Loh et al.
patent: 5783478 (1998-07-01), Chau et al.
patent: 6074919 (2000-06-01), Gardner et al.
patent: 6184114 (2001-02-01), Lukanc
patent: 6246091 (2001-06-01), Rodder
patent: 6541279 (2003-04-01), Hayashi et al.
patent: 6573534 (2003-06-01), Kumar et al.
patent: 2005/0112857 (2005-05-01), Gluschenkov et al.
Lin Huan-Shun
Meng Hsien-Liang
Shiau Wei-Tsun
Shih Hung-Lin
Tsai Chen-Hua
Jianq Chyun IP Office
Pert Evan
United Microelectronics Corp.
Wilson Scott R.
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