Metal oxide semiconductor transistor device

Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With non-planar semiconductor surface

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S171000, C257S618000, C257S623000, C257S625000, C257SE29329, C257SE21428, C438S282000, C438S297000, C438S343000, C438S412000, C438S481000

Reexamination Certificate

active

11163124

ABSTRACT:
A metal-oxide-semiconductor (MOS) transistor device is provided. The MOS transistor device includes a substrate, a gate structure, a spacer, a source/drain region and a barrier layer. The gate structure is disposed on the substrate. The gate structure includes a gate and a gate dielectric layer disposed between the gate and the substrate. The spacer is disposed on the sidewall of the gate structure. The source/drain region is disposed in the substrate on two sides of the spacer. The barrier layer is disposed around the source/drain region. The source/drain region and the barrier layer are fabricated using an identical material. However, the doping concentration of the source/drain region is larger than the doping concentration of the barrier layer.

REFERENCES:
patent: 4914500 (1990-04-01), Liu et al.
patent: 5759901 (1998-06-01), Loh et al.
patent: 5783478 (1998-07-01), Chau et al.
patent: 6074919 (2000-06-01), Gardner et al.
patent: 6184114 (2001-02-01), Lukanc
patent: 6246091 (2001-06-01), Rodder
patent: 6541279 (2003-04-01), Hayashi et al.
patent: 6573534 (2003-06-01), Kumar et al.
patent: 2005/0112857 (2005-05-01), Gluschenkov et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Metal oxide semiconductor transistor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Metal oxide semiconductor transistor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Metal oxide semiconductor transistor device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3890476

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.