Metal oxide semiconductor (MOS) device comprising a buried...

Details Metal oxide semiconductor (MOS) device comprising a buried... Metal oxide semiconductor (MOS) device comprising a buried...

2011-04-12

2011-04-12

Smith, Bradley K (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Gate arrays

C257S550000, C257S401000, C257SE27060, C257SE27098, C257S288000, C257SE27077

Reexamination Certificate

active

07923756

ABSTRACT:
A semiconductor device with a metal oxide semiconductor (MOS) type transistor structure, which is used for, e.g. a static random access memory (SRAM) type memory cell, includes a part that is vulnerable to soft errors. In the semiconductor device with the MOS type transistor structure, an additional load capacitance is formed at the part that is vulnerable to soft errors.

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