Metal oxide semiconductor (MOS) bandgap voltage reference...

Details Metal oxide semiconductor (MOS) bandgap voltage reference... Metal oxide semiconductor (MOS) bandgap voltage reference...

2005-02-22

2005-02-22

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With enlarged emitter area

C257S581000, C257S572000, C257S561000, C257S562000, C257S563000, C257S564000, C361S056000

Reexamination Certificate

active

06858917

ABSTRACT:
A metal oxide semiconductor (MOS) bandgap voltage reference circuit with a plurality of dummy bipolar junction transistors (BJTs) coupled to the mismatched parasitic substrate BJTs for improving parasitic capacitance matching, thereby improving startup behavior of the bandgap reference circuitry.

REFERENCES:
patent: 5224134 (1993-06-01), Miwada
patent: 20030048588 (2003-03-01), Duvvury et al.

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