Metal oxide semiconductor heterojunction field effect transistor

Details Metal oxide semiconductor heterojunction field effect transistor Metal oxide semiconductor heterojunction field effect transistor

1994-08-18

1995-09-19

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Having graded composition

257192, 257289, 257329, H01L 2978, H01L 29161

Patent

active

054518008

ABSTRACT:
A vertical Metal Oxide Semiconductor Heterojunction Field Effect Transistor (MOSHFET) and method of fabrication therefor. The MOSHFET is in a layered wafer made by successively growing an N.sup.+ silicon layer, and a N.sup.- silicon layer, a P.sup.- Si.sub.1-x Gex layer, a P.sup.- Silicon layer and then, an N.sup.- silicon layer, one on top of the other. Trenches are etched through the top 3 layers to form islands that are the MOSHFETs heterojunction channel. A gate deposited or grown in a trench extends vertically from the drain at the bottom of the trench to the source in the layer near the top of the trench.

REFERENCES:
patent: 4568958 (1986-02-01), Baliga
patent: 4916499 (1990-04-01), Kawai

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