Metal oxide semiconductor gated turn-off thyristor including a l

Details Metal oxide semiconductor gated turn-off thyristor including a l Metal oxide semiconductor gated turn-off thyristor including a l

1988-05-02

1991-01-01

Hille, Rolf

357 234, 357 43, 357 55, 357 64, H01L 2974, H01L 2910, H01L 2978, H01L 2702

Patent

active

049822586

ABSTRACT:
In a depletion mode thyristor of the type including a regenerative portion and a non-regenerative portion, the turn-off time for the thyristor is substantially reduced without producing a corresponding increase in the on-resistance of the device by providing a region of relatively low carrier lifetime in the non-regenerative portion of the device in the layer or layers in which charge storage limits the turn-off time for the device. Turn-off of the thyristor is accomplished by pinching off the regenerative portion, thereby diverting current into the low carrier lifetime non-regenerative portion.

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patent: 4782379 (1988-11-01), Baliga
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