Metal oxide semiconductor gated turn-off thyristor having an int

Details Metal oxide semiconductor gated turn-off thyristor having an int Metal oxide semiconductor gated turn-off thyristor having an int

1988-05-02

1990-10-16

Hille, Rolf

357 2312, 357 38, 357 55, H01L 2910, H01L 2978, H01L 2974, H01L 2986

Patent

active

049639501

ABSTRACT:
A depletion mode thyristor includes a plurality of regenerative segments and a plurality of non-regenerative segments, each of which is elongated in a first direction. Regenerative and non-regenerative segments are interleaved in a second direction perpendicular to said first direction. A plurality of regenerative segments may be disposed between adjacent non-regenerative segments. Adjacent regenerative or non-regenerative segments are spaced apart by gate electrode segments which are effective, upon application of an appropriate bias voltage, for pinching off the regenerative segments to force the current therein to transfer to the non-regenerative segments to turn the device off. This structure enables large quantities of current to be transferred from regenerative segments to non-regenerative segments during turn-off without inducing detrimental current crowding.

REFERENCES:
patent: 4760432 (1988-07-01), Stoisiek et al.
patent: 4782379 (1988-11-01), Baliga
patent: 4799095 (1989-01-01), Baliga
patent: 4827321 (1989-05-01), Baliga

Affiliated with

Also associated with

Rating

Metal oxide semiconductor gated turn-off thyristor having an int does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Metal oxide semiconductor gated turn-off thyristor having an int, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Metal oxide semiconductor gated turn-off thyristor having an int will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-853376