Metal oxide semiconductor field effect transistor (MOSFET) fabri

Details Metal oxide semiconductor field effect transistor (MOSFET) fabri Metal oxide semiconductor field effect transistor (MOSFET) fabri

1996-12-27

1998-08-04

Niebling, John

Fishing, trapping, and vermin destroying

437239, H01L 21265

Patent

active

057892660

ABSTRACT:
A MOSFET fabrication method which is capable of enhancing the reliability of a MOSFET by improving a short channel effect of a MOSFET, which includes the steps of forming an oxide possible film on a first buffer film on a substrate, isotropic etching the oxide possible film for exposing a portion of the first buffer film, forming a second buffer film by oxidizing the entire front surface of the substrate in order for the entire surface of the oxide possible film to be oxidized, forming a recess shape channel region formed in the substrate by a channel ion implantation into the resultant structure by using the second buffer film as a mask, removing the second buffer film, forming a gate on the channel region of the substrate, and forming a dopant ion implantation region in the substrate formed at both sides of the gate.

REFERENCES:
patent: 5231038 (1993-07-01), Yamaguchi et al.
patent: 5599728 (1997-02-01), Hu et al.
patent: 5605855 (1997-02-01), Chang et al.

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