Metal oxide semiconductor field effect transistor and method of

Details Metal oxide semiconductor field effect transistor and method of Metal oxide semiconductor field effect transistor and method of

1992-06-11

1993-06-15

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 41, 437 45, 437 54, 437 57, H01L 21265

Patent

active

052197778

ABSTRACT:
A MOSFET comprising a substrate of a first conductivity type, a gate located on the substrate, a channel region of the first conductivity type located beneath a surface portion of the substrate corresponding to a region defined beneath said gate, low concentration and high concentration source regions of a second conductivity type located beneath a surface portion of the substrate corresponding to one of opposite sides of said channel region, and low concentration and high concentration drain regions of the second conductivity type located beneath a surface portion of the substrate corresponding to the other of opposite sides of the channel region. A pair of first impurity regions of the first conductivity type are located to surround said second conductivity type low concentration source region and said second conductivity type low concentration drain region respectively. Also, a second impurity region of the first conductivity type is located within a portion of the bulk substrate spaced a predetermined distance beneath the surface of the substrate.

REFERENCES:
patent: 4904615 (1990-02-01), Okuyama et al.
patent: 4931408 (1990-06-01), Hshieh
patent: 4943537 (1990-07-01), Harrington, III
patent: 5073512 (1991-12-01), Yoshino
patent: 5081052 (1992-01-01), Kobayashi
patent: 5108935 (1992-04-01), Rodder

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