Metal oxide semiconductor device with well region

Details Metal oxide semiconductor device with well region Metal oxide semiconductor device with well region

1990-07-23

1991-08-27

Mintel, William

357 238, 357 20, H01L 2910, H01L 2968, H01L 2906

Patent

active

050437798

ABSTRACT:
An MOS device where the avalanche breakdown strength may be increased without decreasing the on-resistance of the device is provided by decreasing the width of a high impurity concentration area in contact with one of the two electrodes to increase the curvature of the deepest part of the well region.

REFERENCES:
patent: 4206469 (1980-06-01), Hanes et al.
patent: 4593302 (1986-06-01), Lidow et al.
patent: 4803532 (1989-02-01), Mihara
patent: 4821095 (1989-04-01), Temple
patent: 4965647 (1990-10-01), Takahashi

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