Metal-oxide-semiconductor device with bilayered source and drain

Details Metal-oxide-semiconductor device with bilayered source and drain Metal-oxide-semiconductor device with bilayered source and drain

1983-09-13

1985-03-19

James, Andrew J.

357 2312, 357 234, 357 231, 357 91, 357 64, 357 88, H01L 2978

Patent

active

045062790

ABSTRACT:
A metal-oxide-semiconductor device comprising source and drain regions formed in the surface region of a semiconductor substrate, and a gate electrode formed on an insulation layer on the channel region between the source and drain regions. The drain region includes an upper layer and a lower layer having an impurity concentration higher than that of the upper layer.

REFERENCES:
patent: 3946419 (1976-03-01), DeWitt et al.
patent: 4040082 (1977-08-01), Goser
Bayraktaroglu et al., "First Anodic-Oxide GaAs MOSFETs Based on Easy Technological Processes, Electronics Letters, Jan. 22, 1976, vol. 12, No. 3, pp. 53-54.

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