Fishing – trapping – and vermin destroying
Patent
1994-07-25
1996-11-05
Fourson, George
Fishing, trapping, and vermin destroying
437 45, H01L 21265
Patent
active
055717373
ABSTRACT:
An improved structure and process of fabricating a metal oxide field effect (MOSFET) which has a high resistance to electro-static discharge. The device has pre-gate heavily doped source and drain regions which overlap the gate electrode and the source and drain regions. This improved MOSFET device with overlapping pre-gate source and drain regions is incorporated into an electro-static discharge (ESD) circuit to form a memory device which has a high resistance to electro-static discharge (ESD).
The MOSFET device with pre-gate heavily doped source and drain regions can be formed as follows. Spaced pre-gate source and drain regions of a second conductivity type are formed in the substrate with a background doping of a first conductivity type. A gate oxide and a gate is formed in the regions between the pre-gate source and drain regions. The gate at least partially overhangs the pre-gate source and drain regions. Subsequently, spacers are formed on the vertical sidewalls of the gate. Source and drain regions in the substrate are formed on either side of the spacers. Next, using conventional processes, insulating and metal layers are added to connect the circuit elements and form a memory device. The device is connected to form the input and input/output ESD circuits. The combination of the device of the invention and the ESD protection circuit forms an ESD resistant circuit using a minimum number of manufacturing steps.
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Lee Chung-Yuan
Sheu Shing-Ren
Dutton Brian K.
Fourson George
Saile George O.
Stoffel William J.
United Microelectronics Corporation
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