Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Bidirectional rectifier with control electrode
Patent
1996-01-16
1998-07-07
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Bidirectional rectifier with control electrode
257107, 257119, 438133, 438137, H01L 2974
Patent
active
057773467
ABSTRACT:
One embodiment of a metal oxide semiconductor controlled thyristor in accordance with the present invention has a semiconductor wafer with opposing first and second surfaces. The wafer includes first through sixth sequential regions which are disposed one above the other. The first region includes the second surface of the wafer and each of the second through sixth regions has at least a portion which extends up to the first surface. The first, third, and sixth regions have a first type of conductivity and the second, fourth, and fifth regions have a second type of conductivity. A trench with a bottom and sidewalls extends from the first surface and passes through the fourth, fifth, and sixth regions and into the third region. A dielectric material coats the bottom and sidewalls of the trench and a conductive material fills the remainder of the trench. In an alternative embodiment: the third through sixth regions have at least a portion which extends up to the first surface; the first, fourth, and sixth regions have a first type of conductivity; the second, third, and fifth regions have a second type of conductivity; and the trench extends from the first surface and passes through the fifth and sixth regions and into the fourth region.
REFERENCES:
Syau et al., Comparison of Ultralow Specific On-Res-UMOSFET Structures: The ACCUFET, EXTFET, INFET, and conventional UMOSFET's, May 1994; IEEE Transactions on Electron Devices, vol. 41, No. 5, pp. 800-808.
Harris Corporation
Jackson Jerome
Kelley Nathan K.
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