Metal/oxide etch after polish to prevent bridging between...

Details Metal/oxide etch after polish to prevent bridging between... Metal/oxide etch after polish to prevent bridging between...

2007-10-30

2007-10-30

Chen, Kin-Chan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S693000

Reexamination Certificate

active

11000870

ABSTRACT:
Methods for eliminating and/or mitigating bridging and/or leakage caused by the contamination of a dielectric layer with fragments and/or residues of a conductive material are disclosed. The methods involve exposing a semiconductor substrate with a dielectric layer contaminated with fragments and/or residues of conductive materials to one or more conductor and/or dielectric etches. The disclosure by eliminating and/or mitigating metal bridging and/or leakage can provide one or more of the following advantages: high device reliability, decreased manufacturing cost, more efficient metallization, and increased performance.

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