Metal-organic chemical vapor-phase deposition process for fabric

Details Metal-organic chemical vapor-phase deposition process for fabric Metal-organic chemical vapor-phase deposition process for fabric

1994-11-04

1995-07-18

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117104, 117105, 437105, 437107, 437129, 437133, H01L 2120

Patent

active

054331706

ABSTRACT:
A metal-organic chemical vapor-phase deposition process for fabricating a layer of a Group II-VI compound semiconductor using an organometallic compound based on bis(cyclopentadienyl)magnesium having a vapor pressure in the range of from 1.3.times.10 Pa to 1.3.times.10.sup.2 Pa at a temperature of 330.degree. K. The present invention also provides a light-emitting device which is fabricated by means of the metal-organic vapor-phase deposition process above. The process according to the present invention provides a magnesium-containing compound semiconductor layer having an accurately controlled composition, and it readily enables the fabrication of a compound semiconductor layer having a grated structure.

REFERENCES:
patent: 4881979 (1989-11-01), Lewis
patent: 5311533 (1994-05-01), Stutius et al.

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