Metal organic chemical vapor deposition of 111-v compounds on si

Details Metal organic chemical vapor deposition of 111-v compounds on si Metal organic chemical vapor deposition of 111-v compounds on si

1984-04-27

1986-05-13

Saba, William G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29572, 29576E, 136261, 136262, 148 334, 148DIG25, 148DIG59, 148DIG72, 148DIG110, 156612, 156613, 357 16, 357 30, 357 61, H01L 21205, H01L 29267

Patent

active

045884510

ABSTRACT:
Expitaxial composite comprising thin films of a Group III-V compound semiconductor such as gallium arsenide (GaAs) or gallium aluminum arsenide (GaAlAs) on single crystal silicon substrates are disclosed. Also disclosed is a process for manufacturing, by chemical deposition from the vapor phase, epitaxial composites as above described, and to semiconductor devices based on such epitaxial composites. The composites have particular utility for use in making light sensitive solid state solar cells.

REFERENCES:
patent: 3364084 (1968-01-01), Ruehrwein
patent: 3366517 (1968-01-01), Yu
patent: 3433684 (1969-03-01), Zanowick et al.
patent: 3467896 (1969-09-01), Kroemer
patent: 3486029 (1969-12-01), Barrett et al.
patent: 3488542 (1970-01-01), Lehrer et al.
patent: 3541678 (1970-11-01), McDonald
patent: 3556875 (1971-01-01), Holloway et al.
patent: 3575628 (1971-04-01), Word et al.
patent: 3582410 (1971-06-01), LaChapelle
patent: 3589946 (1971-06-01), Tarneja et al.
patent: 3686036 (1972-08-01), Gereth et al.
patent: 3699401 (1972-10-01), Tietjfin et al.
patent: 3729341 (1973-04-01), Dietz et al.
patent: 3802967 (1974-04-01), Ladany et al.
patent: 3811854 (1974-05-01), Pecoraro
patent: 3844843 (1974-10-01), Kay et al.
patent: 3963538 (1976-06-01), Broadie et al.
patent: 3979271 (1976-09-01), Noreika et al.
patent: 4000716 (1977-01-01), Kurata et al.
patent: 4168998 (1979-09-01), Hasegawa et al.
patent: 4177321 (1979-12-01), Nishizawa
patent: 4213801 (1980-07-01), Johnston
patent: 4233092 (1980-11-01), Harris et al.
patent: 4246296 (1981-01-01), Chang
patent: 4250205 (1981-02-01), Constant et al.
patent: 4368098 (1983-01-01), Manasevit
patent: 4370510 (1983-01-01), Stirn
patent: 4404265 (1983-09-01), Manasevit
Manasevit et al., "Use of Metal-Organics . . . Semiconductor Materials" J. Electrochem Soc., vol. 116, No. 12, Dec. 1969, pp. 1725-1732.
R. J. Stirn, K. L. Wang, Y. C. M. Yeh, Proceedings of the 15th Photovoltaic Specialists Conference, Orlando, FL, 1981 (IEEE, N.Y., 1981), p. 1045. e,
R. P. Gale, J. C. C. Fan, B-Y. Tsaur. G. W. Turner & F. M. Davis, IEEE Electron Device Letters, EDL-2, 169 (1981).
P. D. Dapkus, Ann. Rev. Mater. Sci., 12, 243 (1982).
IBM Technical Disclosure Bulletin, vol. 13, No. 5, Oct. 1970, p. 1195-1196, Blum et al.
IBM Technical Disclosure Bulletin, vol. 13, No. 9, Feb. 1971, p. 2609, Shang, D. T.

Affiliated with

Also associated with

Rating

Metal organic chemical vapor deposition of 111-v compounds on si does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Metal organic chemical vapor deposition of 111-v compounds on si, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Metal organic chemical vapor deposition of 111-v compounds on si will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1768272