Metal organic chemical vapor deposition (MOCVD) reactor with rec

Details Metal organic chemical vapor deposition (MOCVD) reactor with rec Metal organic chemical vapor deposition (MOCVD) reactor with rec

1991-01-22

1992-12-22

Beck, Shrive

Coating processes

Coating by vapor, gas, or smoke

427250, 427251, 427252, 118715, 118729, 118730, C23C 1654

Patent

active

051733366

ABSTRACT:
A semiconductor substrate or other object (32) for vapor deposition is mounted on a susceptor disk (16) which rotates about a vertical axis. Chemical vapor flows downwardly through a passageway (14) onto the object (32). A radial space (14a) is provided between the periphery of the disk (16) and an adjacent inner wall (12a) of the passageway (14). Rotation of the disk (16) urges a portion of the vapor flow (60) to be deflected from the disk (16) and the wall (12a) of the passageway (14) upwardly to cause deleterious recirculation of the vapor above the disk (16). A flow guide (52) disposed in the passageway (14) above the disk (16) has an upstream converging section (52a) which causes the flow (56) of vapor to accelerate, and a downstream diverging section (52b) which causes the accelerated flow (58) to expand downwardly and radially outwardly so as to interact with, and prevent upward movement of the deflected portion of the flow (60) and thereby suppress recirculation of the vapor.

REFERENCES:
patent: 4909914 (1990-03-01), Chiba et al.
patent: 4911102 (1990-03-01), Manabe et al.
patent: 4920920 (1990-05-01), Shigeki
patent: 4989541 (1991-02-01), Mikoshiba et al.
patent: 5044315 (1991-09-01), Ozias

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