Metal-organic chemical vapor deposition

Details Metal-organic chemical vapor deposition Metal-organic chemical vapor deposition

1986-06-12

1990-01-23

Bell, Janyce

Coating processes

Electrical product produced

Welding electrode

427 51, 4271261, 4271262, 427262, 4272552, 427264, 427314, 437225, B05D 314, C23C 1600

Patent

active

048957372

ABSTRACT:
An MOCVD deposition technique wherein the pressure of reagent vapors within the reaction vessel (1) is maintained at a reduced pressure in the range 10.sup.-2 to .about.10 millibars and contained mounted substrates (15) are heated non-inductively e.g. by an electric resistance circumferential furnace (5). In the above pressure range, high diffusivity of the reagent vapors ensures exposure of the substrates (15) to a uniform reagent mixture. A large number of substrates (15) may be processed simultaneously. As heating is non-inductive, an inert mounting (17) can be utilized avoiding the introduction of contaminants (e.g. carbon) into the deposited film.

REFERENCES:
patent: 3218203 (1965-11-01), Ruehrwein
patent: 3637434 (1972-01-01), Nakanuma et al.
patent: 4401689 (1983-08-01), Ban
patent: 4436769 (1984-03-01), Moss et al.

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