Metal nitride powders

Chemistry of inorganic compounds – Nitrogen or compound thereof – Binary compound

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

423409, 423412, C01B 21072, C01B 21076

Patent

active

053956060

ABSTRACT:
A metal nitride powder can be made by heating a reactant powder that includes an oxide or hydroxide of Al, Ti, or Zr to a reaction temperature in a nonreactive atmosphere. The heated reactant powder is contacted with a gaseous reactant mixture comprising a nitrogen source and a carbon source. The molar ratio of nitrogen to carbon in the gaseous reactant mixture is at least about 15. The reactant powder is maintained at the reaction temperature for a sufficient time to convert a portion of it to metal nitride powder.

REFERENCES:
patent: 4929433 (1990-05-01), Hexemer et al.
patent: 4975260 (1990-12-01), Imai et al.
patent: 5219804 (1993-06-01), Weimer et al.
patent: 5246683 (1993-09-01), Parent et al.
patent: 5279808 (1994-01-01), Xiao et al.
Tan, B. J.; Xiao, Y.; Suib, S. L.; Galasso, F. S.; "Thermodynamic Analysis of the Thermal Nitridation of Aluminum Oxide by Ammonia and Methane", Chemistry of Materials 4 (1992), 648-657.
Kamiya K.; Yoko, T.; Bessho, M.; "Nitridation of TiO.sub.2 Fibres Prepared by the Sol-Gel Method", Journal of Materials Science 22 (1987) 937-940.
Kamiya, K.; Nishijima, T.; "Nitridation of the Sol-Gel Derived Titanium Oxide Films by Heating in Ammonia Ga", Journal of American Ceramic Society 73 [9 , 1990, 2750-2752.
Shuskus, A. J.; Reeder, T. M.; Paradis, E. L.; "Rf-Sputtered Aluminum Nitride Films on Sapphire", Applied Physics Letters, vol. 24, No. 4, 15 Feb. 1974, 155-156.
Yoshida, S.; Misawa, S.; Fujii, Y.; Takada, S.; Hayakawa, H.; Gonda, S.; Itoh, A.; "Reactive Molecular Beam Epitaxy of Aluminum Nitride", Journal of Vac. Sci. Technol., 16(4), Jul./Aug. 1979, 990-993.
Bensalem, R.; Abid, A.; Sealy, B. J.; "Evaporated Aluminium Nitride Encapsulating Films", Thin Solid Films, 143 (1986) 141-153.
Lee, B. I.; "Einarsrud, M. A.; Low-Temperature Synthesis of Aluminum Nitride Via Liquid-Liquid Mix Carbothermal Reduction", Journal of Materials Science Letters 9 (1990) 1389-1391.
Kuramoto, N.; Taniguchi, H.; "Transparent AlN Ceramics", Journal of Materials Science Letters 3 (1984) 471-474.
Mitomo, M.; Yoshioka Y.; "Preparation of Si.sub.2 N.sub.4 and AlN Powders From Alkoxide-Derived Oxides by Carbothermal Reduction and Nitridation", Advanced Ceramic Materials, 2 [3A] 253-256 (1987).
Silverman, L. D.; "Carbothermal Synthesis of Aluminum Nitride", Advanced Ceramic Materials, 3 [4] 418-419 (1988).
Teusel, I.; Russel, C. J.; "Aluminium Nitride Coatings on Silicon Carbide Fibres, Prepared by Pyrolysis of a Polymeric Precursor", Journal of Materials Science 25 (1990) 3531-3534.
Arnold, H.; Biste, L.; Bolze, D.; Eichhorn, G.; "Chemical and Plasmachemical Vapour Deposition of Aluminum Nitride Layer", Kristall and Technik, 1976, 11, 17-21.
Roman, Y. G.; Adriansen, A. P. M.; "Aluminium Nitride Films Made By Low Pressure Chemical Vapour Deposition: Preparation and Properties", Thin Solid Films, 169 (1989) 241-248.
Manaseveit, H. M.; Erdmann, F. M.; Simpson, W. I.; "The Use of Metalorganics in the Preparation of Semiconductor Materials--IV. The Nitrides of Aluminum and Gallium", Journal of Electrochemical Society, 1971, 118, 1864-1868.
Ban, V. S.; "Mass Spectrometric Studies of Vapor-Phase Crystal Growth", Journal of Electrochemical Society, 1972, 119, 761.
Morita, M.: Uesugi, N.; Isogai, S.; Tsubouchi, K.; Mikoshiba, N.; "Epitaxial Growth of Aluminum Nitride on Sapphire Using Metalorganic Chemical Vapor Deposition", Japanese Journal of Applied Physics, vol. 20, No. 1, Jan. 1981, 17-23.
Mizuta, M.; Fujieda, S.; Matsumoto, Y.; Kawamura, T.; "Low Temperature Growth of GaN and AlN on GaAs Utilizing Metalorganics and Hydrazine", Japanese Journal of Applied Physics, vol. 25, No. 12, Dec. 1986, L945-L948.
Gaskill, D. I.; Bottka, N.; Lin, M. C.; "OMVPE Of GaN and AlN Films by Metal Alkyls and Hydrazine", Journal of Crystal Growth 77 (1986) 418-423.
Furukawa, Y.; "Chemical Vapor Deposition of Insulating Films Using Nitrogen Trifluoride", Japanese Journal of Applied Physics, vol. 23 (1984), No. 3, 376-377.
Edgar, J. H.; Yu, Z. J.; Ahmed, A. U.; Rys, A.; "Low Temperature Metal-Organic Chemical Vapor Deposition of Aluminum Nitride With Nitrogen Trifluoride as the Nitrogen Source", Thin Solid Films, 189 (1990) L11-L14.
Chu, T. L.; Ing, D. W.; Noreika, A. J.; "Epitaxial Growth of Aluminum Nitride", Solid-State Electronics, Pergamon Press 1967, vol. 10, 1023-1027.
Callaghan, M. P.; Patterson, E.; Richards, B. P.; Wallace, C. A.; "The Growth, Crystallographic and Electrical Assessment of Epitaxial Layers of Aluminum Nitrode On Corundum Substrates", Journal of Crystal Growth 22 (1974) 85-98.
Pizzarello, F. A.; Coker, J. E.; "The Structural and Piezoelectric Properties of Epitaxial AlN on Al.sub.2 O.sub.3 ", Journal of Electronic Materials, vol. 4, No. 1, 1975, 25-36.
Liu, J. K.; Lakin, K. M.; Wang, K. L.; "Growth Morphology and Surface-Acoustics-Wave Measurements of AlN Films on Sapphire", Journal of Applied Physics, vol. 46, No. 9, Sep. 1975, 3703-3706.
Interrante, L. V.; Czekaj, C. L. . . . ; Hackney, M. L. J.; Sigel, G. A.; Schields, P. J.; Slack, G. A.; "An Investigation Into The Preparation, Properties, and Processing of SiC/AlN and Si.sub.3 N.sub.4 /AlN Solid Solutions From Organometallic Precursors", Material Research Society Symp. Proc. vol. 121, 465-4770; no date.
Meikle, S.; Nomura, H.; Nakanishi, Y.; Hatanaka, Y.; "Reactions of Atomic Nitrogen and Trimethyl Aluminum Downstream From a Nitrogen Microwave Plasma", Journal of Applied Physics, 67 (1), Jan. 1990, 483-486.
Shen, T. Y.; Yu, Z. Q.; Collins, G. J.; "Disk Hydrogen Plasma Assisted Chemical Vapor Deposition of Aluminum Nitride", Applied Physics Letter 52 (7), Feb. 15, 1988, 576-578.
Hasegawa, F.; Takahashi, T.; Kubo, K.; Nannichi, Y.; "Plasma CVD of Amorphous AlN from Metalorganic Al Source and Properties of the Deposited Films", Japanese Journal of Applied Physics, vol. 26, No. 9, Sep. 1987, 1555-1560.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Metal nitride powders does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Metal nitride powders, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Metal nitride powders will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1404626

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.