Radiant energy – Invisible radiant energy responsive electric signalling – Semiconductor system
Patent
1978-08-29
1980-07-15
Smith, Alfred E.
Radiant energy
Invisible radiant energy responsive electric signalling
Semiconductor system
G01T 124
Patent
active
042130450
ABSTRACT:
A high radiation level dosimeter capable of measuring total ionizing radiation doses from gamma ray, X-ray, or E-beam sources by detecting charge variations in the gate structure of a metal nitride oxide semiconductor (MNOS) type transistor. The MNOS device displays a unique combination of characteristics allowing the storage, removal and measurement of the electrical charge trapped within its gate structure. The magnitude of the charge remaining is ascertained by measuring the threshold voltage necessary to produce a prescribed output current response, while the rate at which this charge decays is dependent on both the elapsed time and total ionizing radiation dose. Since the time and radiation dose effects on the charge are independent and cumulative, the device is capable of being subjected to high radiation doses without permanent effects, and the electrical performance of the device is repeatable to a high degree of accuracy, isolation and measurement of the total radiation dose is readily discernible from the MNOS response. After calibration the device is restored to its unradiated state and subjected to the ionizing radiation source of unknown level, while both the MNOS device response and the elapsed time are recorded. The total ionizing radiation dose administered by the source being measured is obtained by referring to the calibration results containing responses independently attributable to time and total ionizing radiation dose.
REFERENCES:
patent: 3821566 (1974-06-01), Cricchi
R. Williams et al., "Radiation-Induced Memory Loss in Thin-Oxide MNOS Devices," IEEE Trans. Nuc. Sci., vol. 23, No. 6, 12-76, pp. 1554-1557.
D. Ciarlo, "MOSFET Detector Evaluation," IEEE Trans. Nuc. Sci., vol. 21, No. 1, 2-74, pp. 390-394.
R. Fraass et al., "Use of a Metal-Nitride-Oxide-Semiconductor as the Detector for a Radiation Dosimeter," IEEE Trans. Nuc. Sci., vol. 25, No. 6, 12-78, pp. 1613-1617.
Perkins et al., "Radiation Effects and Electrical Stability of Metal-Nitride-Oxide-Silicon Structures," App. Phys. Letters, vol. 12, No. 11, 6-1-68, pp. 385-387.
Fraass Ronald G.
Tallon Roger W.
Fields Carolyn E.
Rusz Joseph E.
Salys Casimer K.
Smith Alfred E.
The United States of America as represented by the Secretary of
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