Metal nanoparticle photonic bandgap device in SOI method

Details Metal nanoparticle photonic bandgap device in SOI method Metal nanoparticle photonic bandgap device in SOI method

2007-08-23

2008-12-02

Mulpuri, Savitri (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

C385S131000, C977S773000, C359S321000

Reexamination Certificate

active

07459324

ABSTRACT:
A Metal Nanoparticle Photonic Bandgap Device in SOI Method (NC#098884). The method includes providing a substrate having a semiconductor layer over an insulator layer, operatively coupling the substrate to a photonic bandgap structure having at least one period, wherein the photonic bandgap structure is adapted to receive and output light along a predetermined path, and operatively coupling the photonic bandgap structure and the substrate to a metal nanoparticle structure comprising at least three metal nanoparticles having spherical shapes of different radii, wherein the at least three metal nanoparticles are adapted to receive and amplify light rays and output amplified light.

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