Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – By pressure alone
Reexamination Certificate
2010-05-28
2011-10-04
Warren, Matthew E (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
By pressure alone
C257S773000, C257S780000, C257SE23022
Reexamination Certificate
active
08030782
ABSTRACT:
Embodiments of the invention provide a first component with a compliant interconnect bonded to a second component with a land pad by a metal to metal bond. In some embodiments, the first component may be a microprocessor die and the second component a package substrate.
REFERENCES:
patent: 7400041 (2008-07-01), Muthukumar et al.
patent: 2002/0164893 (2002-11-01), Mathieu et al.
Muthukumar Sriram
Ramanathan Shriram
Intel Corporation
Ortiz Kathy J.
Warren Matthew E
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