Metal-metal bonding of compliant interconnect

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – By pressure alone

Reexamination Certificate

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Details

C257S773000, C257S780000, C257SE23022

Reexamination Certificate

active

08030782

ABSTRACT:
Embodiments of the invention provide a first component with a compliant interconnect bonded to a second component with a land pad by a metal to metal bond. In some embodiments, the first component may be a microprocessor die and the second component a package substrate.

REFERENCES:
patent: 7400041 (2008-07-01), Muthukumar et al.
patent: 2002/0164893 (2002-11-01), Mathieu et al.

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