Metal line pattern of semiconductor device and method of...

Details Metal line pattern of semiconductor device and method of... Metal line pattern of semiconductor device and method of...

2007-11-08

2010-06-08

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Repair or restoration

C257SE21159

Reexamination Certificate

active

07732224

ABSTRACT:
A method of forming a metal line pattern for a semiconductor device is provided. The method includes forming a preliminary structure on a semiconductor substrate, having a lower barrier metal layer, a metal layer, and an upper barrier and/or passivation layer having a first thickness; removing a top surface of the passivation layer so that the passivation layer has a second thickness; forming a sub-passivation layer on the passivation layer; forming an adhesion promoter and a photoresist pattern on the sub-passivation layer; and forming a metal line pattern by etching the preliminary structure using the photoresist pattern as an etching mask.

REFERENCES:
patent: 5264712 (1993-11-01), Murata et al.
patent: 2006/0276028 (2006-12-01), Park

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