Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2009-06-17
2011-11-08
Tran, Minh-Loan T (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S751000, C257S764000, C257S767000, C257S770000
Reexamination Certificate
active
08053895
ABSTRACT:
A metal line of a semiconductor device includes an insulation layer formed on a semiconductor substrate. The insulation layer has a metal line forming region. A diffusion barrier is formed on a surface of the metal line forming region of the insulation layer. The diffusion barrier includes a multi-layered structure that includes an MoB2layer, an MoxByNzlayer and an Mo layer. A metal layer is formed on the diffusion barrier to fill the metal line forming region of the insulation layer.
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Jung Dong Ha
Kim Baek Mann
Lee Nam Yeal
Yeom Seung Jin
Arroyo Teresa M
Hynix / Semiconductor Inc.
Ladas & Parry LLP
Tran Minh-Loan T
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