Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2011-01-25
2011-01-25
Tran, Long K (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S221000, C257S774000, C257SE27098, C257SE21098, C257SE21575, C257SE21627, C257SE21641
Reexamination Certificate
active
07875979
ABSTRACT:
A metal line of a semiconductor device having a diffusion barrier including CrxByand a method for forming the same is described. The metal line of a semiconductor device includes an insulation layer formed on a semiconductor substrate. The insulation layer is formed having a metal line forming region. A diffusion barrier including a CrxBylayer is subsequently formed on the surface of the metal line forming region and the insulation layer. A metal line is finally formed to fill the metal line forming region of the insulation layer on the diffusion barrier including a CrxBylayer.
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Orlando Auciello, et al; “Multicomponent and Multilayered Thin Films for Advanced Microtechnologies: Techniques, Fundamentals and Devices”, Kluwer Academic Publishers, 1992, ISBN 0-7923-2265-7, pp. 481-482.
Jung Dong Ha
Kim Baek Mann
Kim Jeong Tae
Lee Young Jin
Yeom Seung Jin
Hynix / Semiconductor Inc.
Ladas & Parry LLP
Tran Long K
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