Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2011-07-12
2011-07-12
Nguyen, Cuong Q (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S761000, C257S762000, C257SE21141, C257SE21495, C438S643000, C438S653000, C438S675000
Reexamination Certificate
active
07977793
ABSTRACT:
A metal line in a semiconductor device includes an insulation layer formed on a semiconductor substrate. A metal line forming region is formed in the insulation layer. A metal line is formed to fill the metal line forming region of the insulation layer. And a diffusion barrier that includes an amorphous TaBN layer is formed between the metal line and the insulation layer. The amorphous TaBN layer prevents a copper component from diffusing into the semiconductor substrate, thereby improving upon the characteristics and the reliability of a device.
REFERENCES:
patent: 6445023 (2002-09-01), Vaartstra et al.
patent: 2006/0019495 (2006-01-01), Marcadal et al.
patent: 2007/0190780 (2007-08-01), Chung et al.
patent: 1020030001069 (2003-01-01), None
Jung Dong Ha
Kim Baek Mann
Kim Jeong Tae
Lee Young Jin
Yeom Seung Jin
Hynix / Semiconductor Inc.
Ladas & Parry LLP
Lam Cathy N
Nguyen Cuong Q
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