Metal lift-off systems and methods using liquid solvent and...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

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C438S073000, C438S670000, C438S748000, C257SE31110, C257SE31127

Reexamination Certificate

active

07655496

ABSTRACT:
A method of fabricating a semiconductor device includes patterning a layer of photoresist onto a surface of a wafer to define metal feature areas and residual metal areas. A layer of metal is deposited over the patterned layer of photoresist, the metal layer includes metal feature portions in the metal feature areas, residual metal areas in the residual metal areas, and residual metal flaps at the edges of the metal feature portions. The wafer is sprayed with high-pressure solvent at a pressure to dissolve the layer of photoresist and to physically remove the residual metal portions from the residual metal areas, leaving only at least a portion of the residual metal flaps. The wafer is sprayed with a stream of frozen gas particles to remove the residual metal flaps.

REFERENCES:
patent: 4687541 (1987-08-01), Penney
patent: 5967156 (1999-10-01), Rose et al.
patent: 6500758 (2002-12-01), Bowers
patent: 6690014 (2004-02-01), Gooch et al.
patent: 6734516 (2004-05-01), Jacksen et al.
patent: 2001/0010360 (2001-08-01), Oda
Bilir et al., Stress and Other Challenges with Evaporated Ni-Cr Thin Film Resistors Used in the Manufacture of ASICs, 2003 GaAs Mantech, Inc. 2003 International Conference on Compound Semiconductor Mfg., 4 pages.
Radulescu et al., Introduction of Complete Sputtering Metallization in Conjuncion with CO2 Snow Lift-Off for High Volume GaAs Manufacturing, 2002 GaAs Mantech, Inc., 2002 International Conference on Compound Semiconductor Mfg., 4 pages.
Redd et al., Revitalization of Single Layer Lift-Off For Finer Resolution and Challenging Topography, 2001 GaAs Mantech, Inc., 2001 International Conference on Compound Semiconductor Mfg., 3 pages.
Miller et al., Innovative Metal Lift-Off Process Using Dry Carbon Dioxide, 2001 GaAs Mantech, Inc., 2001 International Conference on Compound Semiconductor Mfg., 4 pages.
Ryan et al., The evolution of interconnection technology at IBM, IBM Journal of Research and Development, vol. 39, Nov. 4, 1995, 17 pages.

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