Metal layer forming methods and capacitor electrode forming...

Details Metal layer forming methods and capacitor electrode forming... Metal layer forming methods and capacitor electrode forming...

2006-05-23

2008-12-23

Wyszomierski, George (Department: 1793)

Metal treatment

Process of modifying or maintaining internal physical...

Processes of coating utilizing a reactive composition which...

C148S273000, C148S280000, C438S387000, C438S399000, C438S650000

Reexamination Certificate

active

07468108

ABSTRACT:
A capacitor electrode forming method includes chemisorbing a layer of at least one metal precursor at least one monolayer thick on a substrate, the layer including non-metal components from the precursor. The chemisorbed layer can be treated with an oxidant and the non-metal components removed to form a treated layer of metal. A capacitor electrode can be formed including the treated layer and, optionally, additional treated layers. Preferably, treating the layer does not substantially oxidize the metal and the treated layers exhibit the property of inhibiting oxygen diffusion. The chemisorbing and the treating can be performed at a temperature below about 450° C. or preferably below about 350° C.

REFERENCES:
patent: 5187637 (1993-02-01), Embree
patent: 5444013 (1995-08-01), Akram et al.
patent: 5899725 (1999-05-01), Harshfield
patent: 5905280 (1999-05-01), Liu et al.
patent: 5908947 (1999-06-01), Vaartstra
patent: 5972769 (1999-10-01), Tsu et al.
patent: 6018065 (2000-01-01), Baum
patent: 6097052 (2000-08-01), Tanaka et al.
patent: 6204049 (2000-08-01), Solayappan
patent: 6162712 (2000-12-01), Baum
patent: 6180447 (2001-01-01), Park
patent: 6180481 (2001-01-01), DeBoer et al.
patent: 6204172 (2001-03-01), Marsh
patent: 6218256 (2001-04-01), Agarwal
patent: 6262469 (2001-07-01), Le et al.
patent: 6281142 (2001-08-01), Basceri et al.
patent: 6291850 (2001-09-01), Choi et al.
patent: 6363691 (2002-04-01), Flaherty
patent: 6420230 (2002-07-01), Derderian
patent: 6482740 (2002-11-01), Soininen et al.
patent: 6548424 (2003-04-01), Putkonen
patent: 6583022 (2003-06-01), Marsh
patent: 6632279 (2003-10-01), Ritala
patent: 6656835 (2003-12-01), Marsh
patent: 6730163 (2004-05-01), Vaartstra
patent: 6809212 (2004-10-01), Meiere et al.
patent: 6824816 (2004-11-01), Aaltonen et al.
patent: 6881260 (2005-04-01), Marsh et al.
patent: 7018469 (2006-03-01), Li et al.
patent: 7105065 (2006-09-01), Marsh
patent: 2001/0024387 (2001-09-01), Raaijmakers et al.
patent: 2001/0038116 (2001-11-01), Figura et al.
patent: 2002/0175329 (2002-11-01), Hirano
Suntola, “Surface Chemistry of Materials Deposition at Atomic Layer Level,” Applied Surface Science, vol. 100/101, Mar. 1996, pp. 391-398.
T. Suntola, Atomic Layer Epitaxy, Handbook of Crystal Growth, vol. 3, 1994, pp. 603-663.
Leskela and Ritala, ALD Precursor Chemistry: Evolution and Future Challenges, 1999.
Ritala et al., “Perfectly Conformal TiN and Al203 Films Deposited by Atomic Layer Deposition,” Chemical Vapor Deposition, V. 5, No. 1, 1999, pp. 7-9.
U.S. Appl. No. 09/653,149, filed Aug. 2000, Derderian.

Affiliated with

Also associated with

Rating

Metal layer forming methods and capacitor electrode forming... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Metal layer forming methods and capacitor electrode forming..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Metal layer forming methods and capacitor electrode forming... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4039377