Metal ion transistor

Details Metal ion transistor Metal ion transistor

2007-12-06

2010-12-28

Cao, Phat X (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Conductivity modulation device

C257S508000, C257S235000, C257SE45001, C257SE45002, C257SE45003

Reexamination Certificate

active

07859025

ABSTRACT:
A metal ion transistor and related methods are disclosed. In one embodiment, the metal ion transistor includes a cell positioned in at least one isolation layer, the cell including a metal ion doped low dielectric constant (low-k) dielectric material sealed from each adjacent isolation layer; a first electrode contacting the cell on a first side; a second electrode contacting the cell on a second side; and a third electrode contacting the cell on a third side, wherein each electrode is isolated from each other electrode.

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