Metal ion source

Details Metal ion source Metal ion source

1988-01-19

1989-07-11

Nguyen, Nam X.

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

20419211, 250423R, C23C 1434

Patent

active

048469530

ABSTRACT:
A sputtering type of a metal ion source includes a microwave radiation means and a pair of magnetic poles to which a negative electric potential is applied. The magnetic pole acts as an electrode for retarding electrons when a sputtering target is placed at the pointed end of the magnetic pole, high density ions generated by the operation of PIG (Penning Ionization Guage) discharge and a magnetic field efficiently bombard and sputter a target, and a microwave discharge acts as an electron supplying source so that a stable discharge is maintained.

REFERENCES:
patent: 4492620 (1985-01-01), Matsuo et al.
patent: 4523971 (1985-06-01), Cuomo et al.
patent: 4543465 (1985-09-01), Sakudo et al.
patent: 4559901 (1985-12-01), Morimoto et al.
patent: 4630566 (1986-12-01), Asmussen et al.
patent: 4691662 (1987-09-01), Koppel et al.
patent: 4721553 (1988-01-01), Saito et al.
"Duoplasmatron and Pig Ion Sources for Heavy Ions", by N. Angert et al, Proc. Int'l Ion Engineering Congress--ISIAT '83 & IPAT '83, Kyoto (1983); pp. 225-230.

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