Metal interconnects for integrated circuit die comprising...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Beam leads

Reexamination Certificate

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Details

C257S741000, C257S758000, C257SE23014, C257SE23017, C257SE23152, C257SE23154

Reexamination Certificate

active

08072066

ABSTRACT:
An integrated circuit includes a substrate; a sealing element spanning a periphery of the substrate that forms a protective boundary for the substrate; a plurality of copper lines spanning the substrate in at least two distinct layers contained within the protective boundary; a first conducting element disposed outside the sealing element; and one or more second conducting elements connecting at least two of the copper lines and that spans the sealing element; wherein the conducting elements are substantially non-oxidizing metals that are resistant to oxidization and that connect the copper line to the first conducting element.

REFERENCES:
patent: 5795796 (1998-08-01), Kim
patent: 6300223 (2001-10-01), Chang et al.
patent: 6521975 (2003-02-01), West et al.
patent: 6815821 (2004-11-01), Yu
patent: 7053453 (2006-05-01), Tsao et al.
patent: 7224042 (2007-05-01), McCollum
patent: 2002/0024115 (2002-02-01), Ibnabdeljalil et al.
patent: 2003/0089997 (2003-05-01), Mergenthaler et al.
patent: 2003/0122220 (2003-07-01), West et al.
patent: 2006/0267154 (2006-11-01), Pitts et al.

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