Metal interconnection structure of semiconductor device and...

Details Metal interconnection structure of semiconductor device and... Metal interconnection structure of semiconductor device and...

2008-05-13

2008-05-13

Smith, Zandra V. (Department: 2822)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Having air-gap dielectric

C438S421000, C438S619000

Reexamination Certificate

active

11019267

ABSTRACT:
Provided is a metal interconnection structure of a semiconductor device, having: a lower metal layer disposed on an insulating layer formed on a semiconductor device; a contact plug disposed on the lower metal layer; a supporting layer disposed to surround the contact plug; an upper metal layer disposed on the contact plug and the supporting layer; and an air layer interposed between the lower and upper metal layers to insulate the lower metal layer from the upper metal layer.

REFERENCES:
patent: 6555467 (2003-04-01), Hsu et al.
patent: 6861332 (2005-03-01), Park et al.
patent: 6930034 (2005-08-01), Colburn et al.
patent: 2003/0127740 (2003-07-01), Hsu et al.
patent: 2002-353304 (2002-12-01), None

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