Metal-insulator varactor devices

Details Metal-insulator varactor devices Metal-insulator varactor devices

2008-06-17

2008-06-17

Quach, T. N. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Voltage variable capacitance device

C257S598000, C257SE29344

Reexamination Certificate

active

07388276

ABSTRACT:
A varactor is configured with first and second conducting layers, spaced apart from one another such that a given voltage can be applied across the first and second conducting layers. Further, an insulator arrangement includes at least one insulator layer disposed between the first and second conducting layers, configured to cooperate with the first and second conducting layers to produce a charge pool which changes responsive to changes in the given voltage such that a device capacitance value between the first and second conducting layers changes responsive to the given voltage. The insulator arrangement can include one layer, two distinct layers or more than two distinct layers. One or more of the layers can be an amorphous material. A zero-bias voltage version of the varactor is also described.

REFERENCES:
patent: 4272641 (1981-06-01), Hanak
patent: 4442185 (1984-04-01), Skotheim
patent: 4482779 (1984-11-01), Anderson
patent: 4510516 (1985-04-01), Bartelink
patent: H667 (1989-09-01), Bedair et al.
patent: 4973858 (1990-11-01), Chang
patent: 4980312 (1990-12-01), Harris et al.
patent: 5018000 (1991-05-01), Yamada et al.
patent: 5019530 (1991-05-01), Kleinsasser et al.
patent: 5302838 (1994-04-01), Roenker et al.
patent: 5326984 (1994-07-01), Rosencher et al.
patent: 5455451 (1995-10-01), Usagawa et al.
patent: 5514904 (1996-05-01), Onga et al.
patent: 5543652 (1996-08-01), Ikeda et al.
patent: 5606177 (1997-02-01), Wallace et al.
patent: 5621222 (1997-04-01), Kimura
patent: 5675295 (1997-10-01), Brebels et al.
patent: 5796119 (1998-08-01), Seabaugh
patent: 5825049 (1998-10-01), Simmons et al.
patent: 5825240 (1998-10-01), Geis et al.
patent: 5883549 (1999-03-01), De Los Santos
patent: 5895934 (1999-04-01), Harvey et al.
patent: 5994891 (1999-11-01), Hubbell
patent: 6049308 (2000-04-01), Hietala et al.
patent: 6077722 (2000-06-01), Jansen et al.
patent: 6107562 (2000-08-01), Hashimoto et al.
patent: 6110393 (2000-08-01), Simmons et al.
patent: 6121541 (2000-09-01), Arya
patent: 6195485 (2001-02-01), Coldren et al.
patent: 6211531 (2001-04-01), Nakazato et al.
patent: 6284557 (2001-09-01), Yiu et al.
patent: 6329655 (2001-12-01), Jack et al.
patent: 6534784 (2003-03-01), Eliasson et al.
patent: 6563185 (2003-05-01), Moddel et al.
patent: 6756649 (2004-06-01), Moddel et al.
patent: 7126151 (2006-10-01), Estes et al.
John G. Simmons,Electric Tunnel Effect between Dissimilar Electrodes Separated by a Thin Insulating Film, Sep. 1993, Journal of Applied Physics, V34, p. 2581.
S. R. Pollack and C. E. Morris,Electron Tunneling through Asymmetric Films of Thermally Grown Al2O3, May 1964, Journal of Applied Physics, V35, N5, p. 1503-1513.
L. O. Hocker, D. R. Sokoloff, V. Daneu, A. Szoke, and A. Javan,Frequency Mixing in the Infrared and Far-Infrared using a Metal-to-Metal Point Contact Diode, Jun. 15, 1968, American Institute of Physics, V 12, N 12, p. 401-402.
S. M. Faris, T. Kenneth Gustafson, and John C. Wiesner,Detection of Optical Infrared Radiation with DC-Biased Electron-Tunneling Metal-Barrier-Metal Diodes, Jul. 1973, IEEE Journal of Quantum Electronics, V QE-9, N 7, p. 737-745.
C. Fumeaux, W. Herrmann, F. K. Kneubuhl, and H. Rothuizen,Nanometer Thin-Film Ni-NiO-Ni Diodes for Detection and Mixing of 30 THz Radiation, Jul. 1998, Infrared Physics and technology, V 39, 123-183.
B. Michael Kale,Electron Tunneling Devices in Optics, Mar. 1985, Optical Engineering, V 24, N 2, p. 267-274.
G. Papp, M. DiVentra, C. Coluzza, A. Baldereschi, and G. Margaritondo,Current Rectification through a Single-Barrier Resonant Tunneling Quantum Structure, 1995, Superlattices and Microstructures, V 17, N 3, p. 273-275.
Alexander Korotkov and Konstantin Likharev,Resonant Fowler-Nordheim Tunneling through Layered Tunnel Barriers and its Possible Applications, Mar. 1999, International Electron Device Meeting Technical Digest.
T. Suemasu et al,Metal(CoSi2)/Insulator(CaF2)Resonant Tunneling Diode, Jan. 1994, Jpn. Journal of Applied Physics, V 33, p. 57-65.
M. Asada, K. Osada, and W. Saitoh,Theoretical Analysis and Fabrication of Small Area Metal/Insulator Resonant Tunneling Diode Integrated with Patch Antenna for Terahertz Photon Assisted Tunneling, 1998, Solid State Electronics, V 42, N7-8, p. 1543-1546.
Aleksanyan et al,Feasibility of Developing a Tunable Oscillator Utilizing a System of Metal-Barrier-Metal-Barrier-Metal Junctions, May 1981, Sov. J. Quantum Electron, vol. 11, No. 5, pp. 635-637.
Aleksanyan et al,Generation of Electromagnetic Oscillations in Metal-Barrier-Metal-Barrier-Metal Structures, Aug. 1982, Sov. J. Quantum Electron., vol. 12, No. 8, pp. 1090-1092.
Belenov et al,Amplification of Plasma Oscillations in Complex Metal-Barrier-Metal Structures, Jul. 1982, Sov. J. Quantum Electron., vol. 12, No. 7, pp. 930-931.
Belenov et al,Investigation of the Radiation Emitted by Metal-Barrier-Metal Structures, Apr. 1983, Sov. J. Quantum Electron., vol. 13, No. 4, pp. 451-455.
Belenov et al,Angular Distribution of the Luminescence Emitted by a Metal-Barrier-Metal Diode, May 1985, Sov. J. Quantum Electron., vol. 15, No. 5, pp. 735-737.
Belenov et al,Resonant Tunneling in Multilayer Structures in the Presence of Surface Electromagnetic Waves, Apr. 1986, Sov. Tech. Phys. Lett., vol. 12, No. 4, pp. 200-202.
Belenov et al,Emission of Surface Electromagnetic Waves in the Case of Resonance Tunneling of Electrons, Oct. 1987, Sov. J. Quantum Electron., vol. 17, No. 10, pp. 1348-1352.
Bykovskii et al,Influence of the Boundary of a Metal Film on the Luminescence Intensity from a Metal-Barrier-Metal Structure, Sov. Phys. Tech. Phys., Aug. 1986, vol. 31, No. 8, pp. 980-981.
Simon M. Sze,Physics of Semiconductor Devices, John Wiley & Sons, 2nd edition, 1981, Chapter 14.
J. Kuendig et al.,Thin-film silicon solar cells for space applications: Radiation hardness and applications for an integrated SOLANT(Solar cell—Antenna)module, 28th IEEE Photovoltaic Specialists Conference, Anchorage, Alaska, Sep. 2000.
G. Ghione and C. Naldi, “Analytical formulas for coplanar lines in hybrid and monolithic MIC's,” Electron. Lett., vol. 20, pp. 179-181 (1984).
Tae-Whan Yoo and Kai Chang, “Theoretical and experimental development of 10 and 35 GHz rectennas,” IEEE Transactions on Microwave Theory and Techniques, vol. 40, No. 6, pp. 1259-1266 (1992).
Ashok Agrawal and Walter E. Powell, “Monopulse printed circuit dipole array,” IEEE Transactions on Antennas and Propagation, vol. AP-33, No. 11, pp. 1280-1283 (1985).
Yu-De Lin and Syh-Nan Tsai, “Coplanar waveguide-fed uniplanar bow-tie antennia,” IEEE Transactions on Antennas and Propagation, vol. 45, No. 2, pp. 305-306 (1997).
C. Fumeaux, W. Herrmann, F.K. Kneubühl, H. Rothuizen, B. Lipphardt, and C.O. Weiss, “Nanometer thin-film Ni-NiO-Ni diodes for mixing 28 THz CO2-laser emissions with difference frequencies up to 176 GHz,” Appl. Phys. B, vol. 66, pp. 327-332 (1998).
D.B. Rutledge, D.P. Neikirk and D.P. Kasilingam, “Integrated-Circuit Antennas,”Infrared and Millimeter Waves, Kenneth J. Button, ed., vol. 10, Academic Press, pp. 24-27, 74-81 (1983).
David B. Rutledge and Michael S. Muha, “Imaging antenna arrays,” IEEE Transactions on Antennas and Propagation, vol. AP-30, No. 4, pp. 535-540 (1982).
C. A. Mead, “Tunnel-Emission Amplifiers,” Proc. IRE, 48, 359 (1960).
Mordehai Heiblum, “Tunneling Hot Electron Transistor Amplifiers (THETA): Amplifiers Operating Up to the Infrared,” Solid State Elec., 24, 343 (1981).
S. Muratake, M. Watanabe, T. Suemasu, and M. Asada, “Transistor action of metal (CoSi2)/insulator (CaF2) hot electron transistor structure,” Elec. Lett., 28, 1002 (1992).
M. Heiblum, M. I. Nathan, D. C. Thomas, and C. M. Knoedler, “Direct Observation of Ballistic Transport in GaAs,” Phys. Rev. Lett., 55, 2200 (1985).
A. Seabaugh, Y-C.Kao, J. Rndall, W. Frensely, A.Khatibzadeh, “Room Temperature Hot Electron Transistors with InAs-Notched Resonant-Tunneling-Diode Injector,” Japanese Journal of Ap

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