Metal-insulator-semiconductor transistor device

Details Metal-insulator-semiconductor transistor device Metal-insulator-semiconductor transistor device

1980-12-18

1985-04-02

Davie, James W.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307584, 357 236, 357 235, H01L 2707

Patent

active

045090700

ABSTRACT:
A metal-insulator-semiconductor (MIS) device comprising a MIS transistor and a MIS input element which are fabricated apart from each other on a semiconductor substrate. The MIS transistor is provided with source and drain regions as well as a channel region between the source and drain regions, a gate insulating layer on the channel region and a gate on the insulating layer. The MIS input element is provided with an input region of the same conductive type as the channel region, an insulating layer on the input region and an electrode on the insulating layer. The electrode and insulating layer of the input element are made of the same material in the same thickness as the gate and insulating layer of the MIS transistor, and the gate of the MIS transistor is exclusively electrically interconnected to the electrode of the MIS input element.

REFERENCES:
patent: 3702943 (1972-11-01), Heuner et al.
patent: 3855581 (1974-12-01), Greene
patent: 4213140 (1980-07-01), Okabe et al.
patent: 4438449 (1984-03-01), Usuda
Proceedings of the Sixth International Congress Microelectronics, Nov. 25th-27th, 1974, Oldenbourg Verlag, Munchen (DE), T. Sato et al., "Application of a Layer Structure to Integrated Circuits".
Electronics, Dec. 9, 1976, L. Altman et al., "Several Solid-State Technologies Show Surprising New Paces".

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