Metal-insulator semiconductor gate controlled thyristor

Details Metal-insulator semiconductor gate controlled thyristor Metal-insulator semiconductor gate controlled thyristor

1994-04-26

1997-04-15

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257133, 257146, 257147, 257168, 257172, H01L 2974, H01L 31141

Patent

active

056212267

ABSTRACT:
In a complex semiconductor device, an IGBT and a thyristor are formed in an identical semiconductor substrate to be connected in parallel with each other between main electrodes such that an end of the thyristor on the cathode side is connected to the main electrode via an insulated gate electrode of the IGBT. Thanks to the complex of the IGBT and the thyristor, there is attained a semiconductor device having a satisfactory ignition characteristic, a low on-state voltage, and a high breakdown voltage.

REFERENCES:
patent: 4847671 (1989-06-01), Pattanayak et al.
patent: 4958211 (1990-09-01), Temple

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