Metal-insulator-semiconductor device phase shifter

Details Metal-insulator-semiconductor device phase shifter Metal-insulator-semiconductor device phase shifter

1975-06-20

1976-12-07

La Roche, Eugene

Wave transmission lines and networks

Coupling networks

With impedance matching

307320, 333 7D, 333 24C, 333 80T, 333 97S, H01P 115, H01P 118

Patent

active

039965368

ABSTRACT:
A microwave signal phase shifter using a metal-insulator-semiconductor (MIS) device is provided. In one preferred embodiment, one end of the device is coupled to a port of a circulator and the opposite end is coupled to ground. When the diode is switched from a first reverse bias state to a second forward bias state, the network switches from a first reactance to a second reactance and the reflection coefficient phase angle shifts.

REFERENCES:
patent: 3750055 (1973-07-01), Funck
patent: 3774123 (1973-11-01), Hume
patent: 3778645 (1973-12-01), Mattauch et al.
patent: 3890631 (1975-06-01), Tiemann
patent: 3909751 (1975-09-01), Tang et al.
patent: 3911382 (1975-10-01), Harth et al.

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