Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Responsive to non-optical – non-electrical signal
Reexamination Certificate
2008-10-30
2011-10-25
Fahmy, Wael (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Responsive to non-optical, non-electrical signal
C257S262000, C257S369000, C257SE29170, C335S155000, C361S233000
Reexamination Certificate
active
08044442
ABSTRACT:
A gated nano-electro-mechanical (NEM) switch employing metal-insulator-metal (MIM) technology and related devices and methods which can facilitate implementation of low-power, radiation-hardened, high-temperature electronic devices and circuits. In one example embodiment a gate electrode is configured as a cantilever beam whose free end is coupled to a MIM stack. The stack moves into bridging contact across a source and drain region when the applied gate voltage generates a sufficient electrostatic force to overcome the mechanical biasing of the cantilever beam. A second set of contacts can be added on the cantilever beam to form a complementary switching structure, or to a separate cantilever beam. The switching can be configured as non-volatile in response to stiction forces. NEM circuits provide a number of advantages within a variety of circuit types, including but not limited to: logic, memory, sleep circuits, pass circuits, and so forth.
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Kam Hei
King Tsu-Jae
Fahmy Wael
Ingham John C
O'Banion John P.
The Regents of the University of California
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