Metal-insulator-metal device

Details Metal-insulator-metal device Metal-insulator-metal device

2007-01-09

2007-01-09

Lee, Calvin (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

C257S432000

Reexamination Certificate

active

10975940

ABSTRACT:
A method for forming a metal-insulator-metal device includes imprinting at least one first layer to form a first impression, removing a portion of at least one second layer through the first depression to form a recess in the at least one second layer bordered by a first side, a first overhang along the first side, a second opposite side and a second overhang along the second side. The method also includes depositing a first metal in the recess spaced from the first side and the second side and oxidizing the first metal to create a non-linear dielectric.

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