Electricity: electrical systems and devices – Electrostatic capacitors – Fixed capacitor
Reexamination Certificate
2007-02-26
2009-10-20
Rose, Kiesha L (Department: 2891)
Electricity: electrical systems and devices
Electrostatic capacitors
Fixed capacitor
C361S312000, C361S313000, C257S532000
Reexamination Certificate
active
07606021
ABSTRACT:
A metal-insulator-metal (MIM) capacitor that includes a silicon nitride (SiN) dielectric film is disclosed. The MIM capacitor includes a bottom electrode, a top electrode and a dielectric layer positioned between the bottom electrode and the top electrode. The dielectric layer includes a silicon nitride film that has a plurality of silicon-hydrogen bonds and a plurality of nitride-hydrogen bonds. A ratio of silicon-hydrogen bonds to nitride-hydrogen bonds is equal to or smaller than 0.5. Accordingly, the nitrogen-rich and compressive silicon nitride film can improve the breakdown voltage of the MIM capacitor.
REFERENCES:
patent: 5483097 (1996-01-01), Ohtsuki et al.
Zhang, Processing and Characterisation of PECVD Silicon Nitride Films, 1996, Advanced Materials for Optics and Electronics, vol. 6, pp. 147-150.
Wolf, Silicon Processing for the VLSI Era, 2000, Lattice Press, vol. 1 Process Technology, pp. 202-203.
Chen Jiann-Fu
Chen Ming-Te
Cheng Chin-Jen
Shih Lian-Hua
Wu Yi-Ching
Hsu Winston
Rose Kiesha L
United Microelectronics Corp.
Wright Tucker
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