Metal-insulator-metal capacitor and interconnecting structure

Semiconductor device manufacturing: process – Making passive device – Trench capacitor

Reexamination Certificate

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Details

C257SE21396

Reexamination Certificate

active

10901239

ABSTRACT:
A method of manufacturing a MIM capacitor and a interconnecting structure using a damascene process. The MIM capacitor and the first interconnecting structure can be formed at equal depths.

REFERENCES:
patent: 2003/0098484 (2003-05-01), Kim
patent: 2004/0175883 (2004-09-01), Kim
patent: 000053453 (2000-08-01), None
patent: 1020000053453 (2000-08-01), None
patent: 1020020094598 (2002-12-01), None

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