Semiconductor device manufacturing: process – Gettering of substrate
Patent
1996-04-29
1999-10-12
Mulpuri, Savitri
Semiconductor device manufacturing: process
Gettering of substrate
438473, 438477, 438528, 438795, H01L 21425
Patent
active
059666234
ABSTRACT:
Fluorination can be used to neutralize transition metal impurities in Si. Fluorine is incorporated into the near-surface region of Si by implantation or annealing in a fluorine containing ambient. Thermal treatments at appropriate temperatures are used to initiate the interdiffusion and reaction between fluorine and metal contaminants. The impurities readily react with fluorine to form a compound or complex, thus significantly reducing the number of mid-gap impurities.
REFERENCES:
patent: 3556879 (1971-01-01), Mayer
patent: 4159917 (1979-07-01), Gluck
patent: 4231809 (1980-11-01), Schmidt
patent: 5028560 (1991-07-01), Tsukamoto et al.
patent: 5174881 (1992-12-01), Iwasaki et al.
patent: 5223445 (1993-06-01), Fuse
patent: 5225355 (1993-07-01), Sugino et al.
patent: 5238871 (1993-08-01), Sato
patent: 5296411 (1994-03-01), Gardner et al.
patent: 5506178 (1996-04-01), Suzuki et al.
patent: 5529937 (1996-06-01), Zhang et al.
patent: 5554883 (1996-09-01), Kuroi
patent: 5578133 (1996-11-01), Sugino et al.
patent: 5656516 (1997-08-01), Suzuki
patent: 5750435 (1998-05-01), Pan
Hung Liang-Sun
Khosla Rajinder P.
Eastman Kodak Company
Leimbach James D.
Mulpuri Savitri
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