Metal gate semiconductor device and manufacturing method

Details Metal gate semiconductor device and manufacturing method Metal gate semiconductor device and manufacturing method

2011-04-12

2011-04-12

Nguyen, Thinh T (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

C257S388000, C257S412000, C257SE29156, C438S302000

Reexamination Certificate

active

07923759

ABSTRACT:
A method for manufacturing a metal gate includes providing a substrate including a gate electrode located on the substrate. A plurality of layers is formed, including a first layer located on the substrate and the gate electrode and a second layer adjacent the first layer. The layers are etched to form a plurality of adjacent spacers, including a first spacer located on the substrate and adjacent the gate electrode and a second spacer adjacent the first spacer. The first spacer is then etched and a metal layer is formed on the device immediately adjacent to the gate electrode. The metal layer is then reacted with the gate electrode to form a metal gate.

REFERENCES:
patent: 5153145 (1992-10-01), Lee et al.
patent: 6096595 (2000-08-01), Huang
patent: 6130123 (2000-10-01), Liang et al.
patent: 6136636 (2000-10-01), Wu
patent: 6355531 (2002-03-01), Mandelman et al.
patent: 6436749 (2002-08-01), Tonti et al.
patent: 6583013 (2003-06-01), Rodder et al.
patent: 6689688 (2004-02-01), Besser et al.
patent: 6696346 (2004-02-01), Hayashizaki
patent: 6699755 (2004-03-01), Chiou et al.
patent: 6723658 (2004-04-01), Eissa et al.
patent: 6908850 (2005-06-01), Doris et al.
patent: 6929992 (2005-08-01), Djomehri et al.
patent: 2004/0224451 (2004-11-01), Chen et al.
patent: 2005/0212015 (2005-09-01), Huang et al.
patent: 1551333 (2004-12-01), None
patent: 2742580 (2005-11-01), None

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