Metal gate engineering for surface P-channel devices

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

Reexamination Certificate

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C257S288000, C257S350000, C257SE21006, C257SE21632, C257SE21637, C257SE29161

Reexamination Certificate

active

07368796

ABSTRACT:
A semiconductor device, such as a CMOS device, having gates with a high work function in PMOS regions and low work functions in NMOS regions and a method of producing the same. Using nitrogen implantation or plasma annealing, a low work function W (or CoSix)/TaSixNy/GOx/Si gate stack is formed in the NMOS regions while a high work function W (or CoSix)/Ta5Si3/GOx/Si gate stack is formed in the PMOS regions. The improved process also eliminates the need for a nitrided GOx which is known to degrade gm(transconductance) performance. The materials of the semiconductor devices exhibit improved adhesion characteristics to adjacent materials and low internal stress.

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