Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2011-08-23
2011-08-23
Such, Matthew W (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257SE23149
Reexamination Certificate
active
08004060
ABSTRACT:
A metal layer and a semiconductor layer are sequentially deposited on a substrate. The semiconductor layer and the metal layer are lithographically patterned to form a stack of a semiconductor portion and a metal gate portion, which is preferably performed concurrently with formation of at least one metal gate stack. In one embodiment, the size of the semiconductor portion is reduced and a metal semiconductor alloy portion is formed on the semiconductor portion by metallization. In a first electrical antifuse formed thereby, the metal semiconductor alloy portion may be electromigrated to form a short between the metal semiconductor alloy portion and the metal gate portion. In another embodiment, two disjoined metal semiconductor alloy portions are formed on the semiconductor portion. In a second electrical antifuse formed thereby, the metal semiconductor alloy portion may be electromigrated to form a short between the two previously disjoined metal semiconductor alloy portions.
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Kim Deok-Kee
Kothandaraman Chandrasekharan
Moy Dan
Robson Norman W.
Safran John M.
International Business Machines - Corporation
Naraghi Ali
Schnurmann H. Daniel
Scully , Scott, Murphy & Presser, P.C.
Such Matthew W
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