Metal gate capacitor fabricated with a silicon gate MOS process

Details Metal gate capacitor fabricated with a silicon gate MOS process Metal gate capacitor fabricated with a silicon gate MOS process

1990-02-13

1991-04-09

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 52, 437 60, 437228, 437235, 437919, 357 236, 357 51, H01L 2170

Patent

active

050064800

ABSTRACT:
A method for making metal gate MOS capacitors with standard silicon gates processes, including the steps of providing a semiconductor substrate and defining active areas and capacitor areas therein, forming field oxide regions that generally surround the active areas and the capacitor areas, forming a gate oxide layer over the active areas and the capacitor areas, and forming polysilicon gates over the active areas. Highly doped source and drain regions in the active areas and highly doped bottom capacitor plate regions in the capacitor areas are then formed, and blanket oxide layer is deposited over the semiconductor structure. The capacitor areas are opened to expose the highly doped bottom capacitor plate regions, and the semiconductor structure is heated to reflow the deposited oxide layer and to grow a capacitor oxide layer over the exposed capacitor areas.

REFERENCES:
patent: 3693428 (1972-09-01), Ferrel
patent: 4001049 (1977-04-01), Baglin et al.
patent: 4214252 (1980-07-01), Goerth
patent: 4224089 (1980-09-01), Nishimoto et al.
patent: 4293588 (1981-10-01), Neukcomm
patent: 4413401 (1983-11-01), Klein et al.
patent: 4432133 (1984-02-01), Furuyama
patent: 4466177 (1984-08-01), Chao
patent: 4518630 (1985-05-01), Grasser
patent: 4535528 (1985-08-01), Chen et al.
patent: 4571607 (1986-02-01), Togei
patent: 4603059 (1986-07-01), Kiyosumi et al.
patent: 4638400 (1987-01-01), Brown et al.
patent: 4700457 (1987-10-01), Matsakawa
patent: 4746377 (1988-05-01), Kobayashi
Ghandhi, "VLSI Fabrication Principles" John Wiley and Sons, N.Y. 1983, pp. 300-301, 353-354, 631-633, 378-385.

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