Metal film etching method

Details Metal film etching method Metal film etching method

1997-02-28

1998-12-08

Breneman, R. Bruce

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438697, 438710, 438723, H01L 21302

Patent

active

058468862

ABSTRACT:
A metal film etching method etches selectively a metal film formed on a layer insulating film provided with viaholes so as to cover the surface of the layer insulating film and fill up the viaholes so that the metal film excluding portions there of filling up the viaholes are removed completely without forming a pit in the portions of the metal film filling up the viaholes. The metal film etching method uses a mixed reactive gas of a gas containing fluorine atoms, a gas containing chlorine atoms and oxygen gas.

REFERENCES:
patent: 4824802 (1989-04-01), Brown et al.
patent: 4980018 (1990-12-01), Mu et al.
patent: 5164330 (1992-11-01), Davis et al.
patent: 5231051 (1993-07-01), Baldi et al.
patent: 5514604 (1996-05-01), Brown
"Plasma Etching Methods for the Formation of Planarized Tungsten Plugs Used in Multilevel VLSI Metallizations"; J. Elect. Soc., Solid State Sci. and Tech.; pp. 936-940; Saia et. al., Apr. 1988; vol. 135; No. 4.
"Etchback of Blanket Tungsten Films In a Hexode Reactor"; Robb et. al., 1988; Abstract Only; Proc.-Elect. Soc., 89-6; ISSN: 0161-6374.

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