Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1997-09-17
1999-11-30
Chaudhuri, Olik
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
438643, 438648, 438653, H01L 2348
Patent
active
059947756
ABSTRACT:
The invention comprises an integrated circuit structure, and a process for making same, comprising a via/contact opening in a dielectric layer; a CVD layer of titanium nitride having a thickness of at least about 50 Angstroms, but not exceeding about 200 Angstroms, on the sidewall and bottom surfaces of the via/contact opening to provide adherence of the filler material to the underlying and sidewall surface of the opening; a CVD barrier layer of tungsten, having a thickness of about 50 Angstroms, but not exceeding about 300 Angstroms, formed over the titanium nitride layer; and the remainder of the via/contact opening filled with a highly conductive metal selected from the group consisting of copper, CVD aluminum, and force-filled aluminum.
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Catabay Wilbur G.
Zhao Joe W.
Chaudhuri Olik
LSI Logic Corporation
Taylor John P.
Wille Douglas A.
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