Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Reexamination Certificate
2008-01-09
2010-10-26
Picardat, Kevin M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
C257S621000, C257S686000, C257S774000, C257S777000
Reexamination Certificate
active
07821120
ABSTRACT:
A vertical wafer-to-wafer interconnect structure is provided in which a first wafer and a second wafer are mated by way of metal studs that extend from a surface of the first wafer. The metal studs extend from the surface of the first wafer into a corresponding through via of the second wafer. A polyimide coating is present in the through via on mated surfaces of the first and second wafers and on another surface of the second wafer not mated to the first wafer, thus the metal studs provide a continuous metal path from the first wafer through the second wafer. Since only metal studs for the vertical connection are used, no alpha radiation is generated by the metal studs.
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EP Official Action—Application No. 07853503.6—Jul. 28, 2009.
Pogge H. Bernhard
Yu Roy R.
Au Bac H
International Business Machines - Corporation
Picardat Kevin M
Schnurmann H. Daniel
Scully , Scott, Murphy & Presser, P.C.
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